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NZT660/NZT660A PNP Low Saturation Transistor
April 2005
NZT660/NZT660A
PNP Low Saturation Transistor
* These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
4
3 2 1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25C unless otherwise noted
a
Symbol
VCEO VCBO VEBO IC TJ, TSTG
NOTES:
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
NZT660
60 80 5 3 - 55 ~ +150
NZT660A
60 60 5 3 - 55 ~ +150
Units
V V V A C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO
Ta = 25C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current
Test Conditions
IC = 10mA IC = 100A IE = 100A VCB = 30V VCB = 30V, TA = 100C VEB = 4V NZT660 NZT660A
Min.
60 80 60 5
Typ.
Max.
Units
V V V V
100 10 100
nA A nA
On Characteristics * hFE DC Current Gain IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 3A, VCE = 2V NZT660 NZT660A
70 100 250 80 25 300 550
(c)2005 Fairchild Semiconductor Corporation
1
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NZT660/NZT660A Rev. C3
NZT660/NZT660A PNP Low Saturation Transistor
Electrical Characteristics
Symbol
VCE(sat)
Ta = 25C unless otherwise noted (Continued)
Parameter
Collector-Emitter Saturation Voltage
Test Conditions
IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA IC = 1A, VCE = 2V NZT660 NZT660A
Min.
Typ.
Max.
300 550 500 1.25 1
Units
mV mV mV V V
VBE(sat) VBE(on)
Base-Emitter Saturation Voltage Base-Emitter On Voltage
Small Signal Characteristics Cobo fT Output Capacitance Transition Frequency VCB = 10V, IE = 0, f = 1MHz IC = 100mA, VCE = 5V, f = 100MHz
75 45 pF MHz
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
Thermal Characteristics Ta=25C unless otherwise noted
Symbol
PD RJA
Parameter
Total Device Dissipation Thermal Resistance, Junction to Ambient
NZT660/NZT660A
2 62.5
Units
W C/W
NZT660/NZT660A Rev. C3
2
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NZT660/NZT660A PNP Low Saturation Transistor
Typical Performance Characteristics
Figure 1. Base-Emitter Saturation Voltage vs Collector Current
VBEON- BASE-EMITTER ON VOLTAGE (V)
= 10
Figure 2. Base-Emitter On Voltage vs Collector Current
V -BASE-EMITTER SATURATION VOLTAGE(V) BESAT
1.4 1.2 1
= 10 = 10 = 10 = 10
1.6 1.4 1.2 1
Vce = 2.0V
- 40C
0.8 0.6 0.4 0.2 0.001
25C 125C
- 40C
0.8 0.6 0.4
125C 25C
0.01 0.1 1 I C - COLLECTOR CURRENT (A)
10
0.2 0.0001
0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A)
10
Figure 3. Collector-Emitter Saturation Voltage vs Collector Current
= 10
Figure 4. Input/Output Capacitance vs Reverse Bias Voltage
400 350
CAPACITANCE (pf)
Cobo
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
0.8 0.7 0.6 0.5
= 10 = 10 = 10 = 10
125C 25C
f Vce = 2.0V = 1.0MHz
300 250 200 150 100 50 0 0.1 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100
C ibo
0.4 0.3
- 40C
0.2 0.1 0 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10
Figure 5. Current Gain vs Collector Current
1000 900 H FE - CURRENT GAIN 800 700 600 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10
- 40C 25C 125C Vce = 2.0V
NZT660/NZT660A Rev. C3
3
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NZT660/NZT660A PNP Low Saturation Transistor
Mechanical Dimensions
SOT-223
0.08MAX
3.00 0.10
MAX1.80
1.75 0.20
3.50 0.20
(0.60)
0.65 0.20
+0.04
0.06 -0.02
2.30 TYP (0.95) 4.60 0.25
0.70 0.10 (0.95)
+0.10 0.25 -0.05
(0.60)
0~
10
1.60 0.20
(0.46)
(0.89)
6.50 0.20
7.00 0.30
Dimensions in Millimeters
NZT660/NZT660A Rev. C3
4
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NZT660/NZT660A PNP Low Saturation Transistor
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I15
5 NZT660/NZT660A Rev. C3
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